BSL308CH6327XTSA1 vs BSS127H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSL308CH6327XTSA1 dari Infineon dan BSS127H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSL308CH6327XTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
Paket PG-TSOP6-6 (TSOP-6, 6 pins) SOT-23-3 (PG-SOT23)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW 500 mW (Ta)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 4.5 V (logic level, rated)
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
Rentang Suhu Kerja -55 °C to +150 °C —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
Status RoHS Compliant Compliant (lead-free)
Lead-Free Yes —
Bebas Halogen Yes (per Infineon product family convention) Yes, per IEC 61249-2-21
FET Type — N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Suhu Hubung Kerja — -55 C to +150 C
Jumlah Pin — 3
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101

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