BSL308CH6327XTSA1 vs BSS127H6327XTSA2 Comparison
Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSS127H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSL308CH6327XTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.21 | $0.03 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ low-voltage power MOSFETs | β |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | β |
| Package | PG-TSOP6-6 (TSOP-6, 6 pins) | SOT-23-3 (PG-SOT23) |
| Drain-to-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | β |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | β |
| Total Power Dissipation (Ptot) | 500 mW | 500 mW (Ta) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4.5 V (logic level, rated) |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | β |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | β |
| Total Gate Charge (Qg) | 5 nC @ 10 V | β |
| Input Capacitance (Ciss) | 18 pF | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | β |
| RoHS Status | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | β |
| Halogen-Free | Yes (per Infineon product family convention) | Yes, per IEC 61249-2-21 |
| FET Type | β | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) | β | 21 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) max | β | 500 ohm at ID = 21 mA |
| Operating Junction Temperature | β | -55 C to +150 C |
| Pin Count | β | 3 |
| dv/dt Rated | β | Yes |
| Automotive Qualification | β | AEC-Q101 |