BSL308CH6327XTSA1 vs BSS127H6327XTSA2 Comparison

Detailed side-by-side comparison of BSL308CH6327XTSA1 by Infineon and BSS127H6327XTSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSL308CH6327XTSA1 BSS127H6327XTSA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS™ low-voltage power MOSFETs —
Configuration Complementary dual MOSFET (1 N-channel + 1 P-channel) —
Package PG-TSOP6-6 (TSOP-6, 6 pins) SOT-23-3 (PG-SOT23)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A —
Continuous Drain Current - P-channel (ID, P-ch) 2 A —
Total Power Dissipation (Ptot) 500 mW 500 mW (Ta)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 4.5 V (logic level, rated)
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch] —
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch] —
Total Gate Charge (Qg) 5 nC @ 10 V —
Input Capacitance (Ciss) 18 pF —
Operating Temperature Range -55 °C to +150 °C —
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade) —
RoHS Status Compliant Compliant (lead-free)
Lead-Free Yes —
Halogen Free Yes (per Infineon product family convention) Yes, per IEC 61249-2-21
FET Type — N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Operating Junction Temperature — -55 C to +150 C
Pin Count — 3
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101

Datasheets & Resources

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