BSL308CH6327XTSA1 vs BSS127H6327XTSA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSL308CH6327XTSA1 sa pamamagitan ng Infineon at BSS127H6327XTSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSL308CH6327XTSA1 - 30V 2.3A Dual N/P MOSFET Array | Infineon
BSL308CH6327XTSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSL308CH6327XTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ low-voltage power MOSFETs | — |
| Configuration | Complementary dual MOSFET (1 N-channel + 1 P-channel) | — |
| Packhaging | PG-TSOP6-6 (TSOP-6, 6 pins) | SOT-23-3 (PG-SOT23) |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current - N-channel (ID, N-ch) | 2.3 A | — |
| Continuous Drain Current - P-channel (ID, P-ch) | 2 A | — |
| Total Power Dissipation (Ptot) | 500 mW | 500 mW (Ta) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4.5 V (logic level, rated) |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) N-ch] | — |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | [DATA_NEEDED: RDS(on) P-ch] | — |
| Total Gate Charge (Qg) | 5 nC @ 10 V | — |
| Input Capacitance (Ciss) | 18 pF | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | Yes (per Infineon part-number suffix, automotive grade) | — |
| Tindminan RoHS | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| Wala sa Halogen | Yes (per Infineon product family convention) | Yes, per IEC 61249-2-21 |
| FET Type | — | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 21 mA (Ta) |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| Temperature ng Junction na Operasyon | — | -55 C to +150 C |
| Bilang ng Pin | — | 3 |
| dv/dt Rated | — | Yes |
| Automotive Qualification | — | AEC-Q101 |