BSL316CH6327XTSA1 vs BSS308PEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSL316CH6327XTSA1 dari Infineon dan BSS308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSL316CH6327XTSA1 BSS308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS small-signal complementary MOSFET OptiMOS P (small signal / small power MOSFET)
Configuration Complementary pair (1 N-channel + 1 P-channel in one package) —
Drain-Source Voltage (VDS) 30 V -30 V
Continuous Drain Current (N-channel ID) 1.4 A —
Continuous Drain Current (P-channel ID) 1.5 A —
Total Power Dissipation (Ptot) 500 mW —
Paket PG-TSOP6-6 (TSOP6, 6-pin) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (junction) —
Technology OptiMOS low-voltage MOSFET —
Channel Type N-channel + P-channel (dual) —
Jumlah Pin 6 —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: gate threshold voltage]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Tipe Transistor — P-Channel Enhancement Mode MOSFET
Continuous Drain Current (ID) — -2 A (Ta)
RDS(on) Max — 80 mΩ at VGS = -10 V
Gate-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD) — 500 mW (Ta)
Rentang Suhu Kerja — -55 °C to +150 °C
Paket / Case — PG-SOT23 (SOT-23-3)
Jumlah Pin — 3
Qualification — AEC-Q101 Automotive
Packaging — Tape & Reel (T/R)
Standard Reel Quantity — 3000 pcs

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