BSL316CH6327XTSA1 vs BSS308PEH6327XTSA1 比較
詳細並排比較 BSL316CH6327XTSA1 由 Infineon 與 BSS308PEH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ 啟用中規格比較
| 參數 | BSL316CH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS small-signal complementary MOSFET | OptiMOS P (small signal / small power MOSFET) |
| Configuration | Complementary pair (1 N-channel + 1 P-channel in one package) | — |
| Drain-Source Voltage (VDS) | 30 V | -30 V |
| Continuous Drain Current (N-channel ID) | 1.4 A | — |
| Continuous Drain Current (P-channel ID) | 1.5 A | — |
| Total Power Dissipation (Ptot) | 500 mW | — |
| 封裝 | PG-TSOP6-6 (TSOP6, 6-pin) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +150C (junction) | — |
| Technology | OptiMOS low-voltage MOSFET | — |
| Channel Type | N-channel + P-channel (dual) | — |
| 腳位數 | 6 | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: gate threshold voltage] |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| 電晶體類型 | — | P-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| 工作溫度範圍 | — | -55 °C to +150 °C |
| 封裝 / 外殼 | — | PG-SOT23 (SOT-23-3) |
| 腳位數 | — | 3 |
| Qualification | — | AEC-Q101 Automotive |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |