BSO613SPVGXUMA1 vs BSP135H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSO613SPVGXUMA1 dari Infineon dan BSP135H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSO613SPVGXUMA1 BSP135H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel, Depletion Mode
Drain-Source Voltage (VDS) -60 V 600 V
Continuous Drain Current (ID) at TA=25C -3.44 A —
Power Dissipation (PD) at TA=25C 2.5 W —
Paket PG-DSO-8-6 (Power-SO-8) PG-SOT223-4 (SOT-223-3 plus tab)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS (Trench) SIPMOS (planar DMOS)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max values] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max at VGS=10V] —
RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) max at VGS=4.5V] —
Rentang Suhu Kerja -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) -55C to +150C (junction, typical)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-V] —
Level MSL MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) 1
Status RoHS Compliant Compliant
Lead-Free Yes —
Avalanche Rated Yes (per Infineon OptiMOS family) —
Jumlah Pin 8 (6 active, 2 thermal/NC) —
Manufacturer — Infineon Technologies
Part Number — BSP135H6327XTSA1
Continuous Drain Current (ID) — 120 mA
Power Dissipation (PD) — 1.8 W
On-Resistance RDS(on) max — 45 ohm at VGS = 0 V
On-Resistance RDS(on) — 25 ohm (typical, per digchip)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Operating Mode — Normally ON (depletion)

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