BSP135H6327XTSA1 vs BSP129H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP135H6327XTSA1 dari Infineon dan BSP129H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP135H6327XTSA1 BSP129H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 120 mA —
Power Dissipation (PD) 1.8 W —
On-Resistance RDS(on) max 45 ohm at VGS = 0 V 4.2 ohm (some sources 6 ohm)
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Operating Mode Normally ON (depletion) —
Paket PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223, 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) —
Rentang Suhu Kerja -55C to +150C (junction, typical) —
Status RoHS Compliant Compliant
Level MSL 1 [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at TA=25C — 350 mA
Power Dissipation (PD) at TA=25C — 1.8 W
Suhu Kerja — -55 C to +150 C (junction)
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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