BSP135H6327XTSA1 vs BSP129H6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP135H6327XTSA1 sa pamamagitan ng Infineon at BSP129H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP135H6327XTSA1 BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 - 600V N-Ch Depletion-Mode MOSFET | Infineon

BSP135H6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP135H6327XTSA1 BSP129H6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number BSP135H6327XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 120 mA —
Power Dissipation (PD) 1.8 W —
On-Resistance RDS(on) max 45 ohm at VGS = 0 V 4.2 ohm (some sources 6 ohm)
On-Resistance RDS(on) 25 ohm (typical, per digchip) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] [DATA_NEEDED: VGS max rating]
Operating Mode Normally ON (depletion) —
Packhaging PG-SOT223-4 (SOT-223-3 plus tab) PG-SOT223-4 (SOT-223, 3+Tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology SIPMOS (planar DMOS) —
Hanay ng Temperature na Operasyon -55C to +150C (junction, typical) —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at TA=25C — 350 mA
Power Dissipation (PD) at TA=25C — 1.8 W
Temperature na Operasyon — -55 C to +150 C (junction)
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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