BSP295H6327XTSA1 vs BSR315PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSP295H6327XTSA1 dari Infineon dan BSR315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP295H6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A | — |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W | — |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ | — |
| Paket | PG-SOT223-4 (3 leads + tab) | PG-SC59-3 / SOT-23-3 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C | -55 C to +150 C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | ±20 V (max VGS) |
| Qualification | AEC-Q101 (Automotive) | — |
| Status RoHS | Compliant | Compliant |
| Tape and Reel Packing Code | H6327 (7-inch reel) | — |
| Channel Mode | Enhancement | — |
| Technology | Planar N-channel MOSFET | — |
| Drain Tab Connection | Pin 4 (tab) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR315PH6327XTSA1 |
| Series | — | OptiMOS P-Channel |
| FET Type | — | P-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -620 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 800 mOhm @ -620 mA, -10 V |
| Input Capacitance (Ciss) | — | 176 pF @ 25 V |
| Total Gate Charge (Qg) | — | 6 nC @ 10 V |
| Jumlah Pin | — | 3 |
| Packaging | — | Tape & Reel (TR) |
| Automotive Qualified | — | Yes (per Infineon product family marking) |