BSP295H6327XTSA1 vs BSR315PH6327XTSA1 比較
詳細並排比較 BSP295H6327XTSA1 由 Infineon 與 BSR315PH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP295H6327XTSA1 | BSR315PH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) max | 60 V | — |
| Continuous Drain Current (ID) at Ta=25 °C | 1.8 A | — |
| Power Dissipation (PD) at Ta=25 °C | 1.8 W | — |
| Drain-Source On-Resistance RDS(on) max | 300 mΩ | — |
| 封裝 | PG-SOT223-4 (3 leads + tab) | PG-SC59-3 / SOT-23-3 |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 °C to +150 °C | -55 C to +150 C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | ±20 V (max VGS) |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 狀態 | Compliant | Compliant |
| Tape and Reel Packing Code | H6327 (7-inch reel) | — |
| Channel Mode | Enhancement | — |
| Technology | Planar N-channel MOSFET | — |
| Drain Tab Connection | Pin 4 (tab) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSR315PH6327XTSA1 |
| Series | — | OptiMOS P-Channel |
| FET Type | — | P-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -620 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 800 mOhm @ -620 mA, -10 V |
| Input Capacitance (Ciss) | — | 176 pF @ 25 V |
| Total Gate Charge (Qg) | — | 6 nC @ 10 V |
| 腳位數 | — | 3 |
| Packaging | — | Tape & Reel (TR) |
| Automotive Qualified | — | Yes (per Infineon product family marking) |