BSP88H6327XTSA1 vs BSP92PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSP88H6327XTSA1 dari Infineon dan BSP92PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP88H6327XTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 240 V | -250 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | -260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1.8 W (Ta) |
| Paket | PG-SOT223-4 (SOT-223-3) | PG-SOT223-4 (SOT-223-4) |
| Tipe Mounting | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Configuration | Single | — |
| Suhu Kerja | -55 C to +150 C | -55C to +150C (Tj) |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical and min/max] |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS P-Channel Small-Signal Power MOSFET |
| Channel Polarity | — | P-Channel |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |
| Jumlah Pin | — | 4 (Gate, Drain, Drain, Source) |