BSP88H6327XTSA1 vs BSS169H6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSP88H6327XTSA1 dari Infineon dan BSS169H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP88H6327XTSA1 | BSS169H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 240 V | — |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | 170 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 360 mW (Ta) |
| Paket | PG-SOT223-4 (SOT-223-3) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | — |
| Configuration | Single | — |
| Suhu Kerja | -55 C to +150 C | — |
| Technology | SIPMOS (planar enhancement mode) | Depletion-mode vertical DMOS |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | Pinch-off approx. -3.5 V (typical) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| FET Type | — | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| RDS(on) Maximum | — | 6 Ohm at VGS=0 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS absolute maximum rating] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: junction/ambient operating temperature range] |
| Jumlah Pin | — | 3 |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Drain Current at 25C | — | 170 mA continuous |
| Typical RDS(on) | — | [DATA_NEEDED: typical RDS(on) value] |