BSR316PH6327XTSA1 vs BSP125H6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSR316PH6327XTSA1 dari Infineon dan BSP125H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
| Series | OptiMOS | — |
| FET Type | P-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | -100 V | 600 V |
| Continuous Drain Current (ID) at TA | -360 mA | — |
| Continuous Drain Current (ID) at TC | [DATA_NEEDED: ID at TC specific value] | — |
| On-State Resistance RDS(on) max | 1800 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | -1.7 V typical, -2.5 V max | — |
| Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (Tc) | 500 mW | — |
| Paket | PG-SC59-3 (SC-59 / SOT-23 equivalent) | PG-SOT223-4 (SOT-223-3 + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | — |
| Qualification | Automotive | Automotive / Industrial grade |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 (Unlimited) |
| Polarity | P-Channel | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Technology | — | SIPMOS (Small Signal Power MOSFET) |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Suhu Kerja | — | -55C to +150C (TJ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |