BSR316PH6327XTSA1 vs BSP125H6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSR316PH6327XTSA1 disebabkan oleh Infineon dan BSP125H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
| Series | OptiMOS | — |
| FET Type | P-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | -100 V | 600 V |
| Continuous Drain Current (ID) at TA | -360 mA | — |
| Continuous Drain Current (ID) at TC | [DATA_NEEDED: ID at TC specific value] | — |
| On-State Resistance RDS(on) max | 1800 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | -1.7 V typical, -2.5 V max | — |
| Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (Tc) | 500 mW | — |
| Kemasan | PG-SC59-3 (SC-59 / SOT-23 equivalent) | PG-SOT223-4 (SOT-223-3 + tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | — |
| Qualification | Automotive | Automotive / Industrial grade |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 (Unlimited) |
| Polarity | P-Channel | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Technology | — | SIPMOS (Small Signal Power MOSFET) |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Suhu Operasi | — | -55C to +150C (TJ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |