BSS127H6327XTSA2 vs BSD235CH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS127H6327XTSA2 dari Infineon dan BSD235CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS127H6327XTSA2 BSD235CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) 500 mW
Suhu Hubung Kerja -55 C to +150 C —
Paket SOT-23-3 (PG-SOT23) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 6
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant (lead-free) Compliant (lead-free)
Bebas Halogen Yes, per IEC 61249-2-21 —
Level MSL [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Technology — OptiMOS™ low-voltage
Rentang Suhu Kerja — -55 °C to +150 °C (junction)
Polarity — N-channel + P-channel
Channel Mode — Enhancement

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon