BSS138L vs BSS138LT1G Perbandingan
Perbandingan bersamaan detil BSS138L dari onsemi dan BSS138LT1G dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS138L | BSS138LT1G |
|---|---|---|
| Merek | onsemi | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement Mode | — |
| VDS Drain-Source Voltage | 50 V | — |
| Continuous Drain Current (Ta) | 200 mA | — |
| Power Dissipation (Ta) | 350 mW | — |
| RDS(on) Max | 3.5 ohm | — |
| Technology | Trench MOSFET, high cell density | — |
| Gate Type | Logic Level | — |
| Paket | SOT-23-3 | SOT-23-3 (TO-236) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single FET | Single FET |
| Switching Performance | Fast switching, rugged, reliable | — |
| Kapasitansi Masukan | [DATA_NEEDED: Ciss] | — |
| VGS Gate-Source Voltage | [DATA_NEEDED: VGS max rating] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Packaging | 3000 units per reel (tape and reel) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (RoHS Compliant and Pb-free per Easybom) |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 200 mA (Ta) |
| Power Dissipation (PD) | — | 225 mW (Ta) |
| On-Resistance Max (RDS(on)) | — | 3.5 ohm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-Source Voltage Max (VGS) | — | [DATA_NEEDED: maximum gate-source voltage] |
| Channel Mode | — | Enhancement Mode |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Product Family | — | BSS138LT Series Small Signal MOSFET |
| Typical Applications | — | Computers, printers, cordless phones, DC-DC converters |