BSS138L vs BSS138LT1G Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138L disebabkan oleh onsemi dan BSS138LT1G disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS138L | BSS138LT1G |
|---|---|---|
| Merek | onsemi | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Operating Mode | Enhancement Mode | — |
| VDS Drain-Source Voltage | 50 V | — |
| Continuous Drain Current (Ta) | 200 mA | — |
| Power Dissipation (Ta) | 350 mW | — |
| RDS(on) Max | 3.5 ohm | — |
| Technology | Trench MOSFET, high cell density | — |
| Gate Type | Logic Level | — |
| Kemasan | SOT-23-3 | SOT-23-3 (TO-236) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single FET | Single FET |
| Switching Performance | Fast switching, rugged, reliable | — |
| Kapasitansi Masukan | [DATA_NEEDED: Ciss] | — |
| VGS Gate-Source Voltage | [DATA_NEEDED: VGS max rating] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Packaging | 3000 units per reel (tape and reel) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (RoHS Compliant and Pb-free per Easybom) |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 50 V |
| Continuous Drain Current (ID) | — | 200 mA (Ta) |
| Power Dissipation (PD) | — | 225 mW (Ta) |
| On-Resistance Max (RDS(on)) | — | 3.5 ohm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate-Source Voltage Max (VGS) | — | [DATA_NEEDED: maximum gate-source voltage] |
| Channel Mode | — | Enhancement Mode |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Product Family | — | BSS138LT Series Small Signal MOSFET |
| Typical Applications | — | Computers, printers, cordless phones, DC-DC converters |