BSS192PH6327FTSA1 vs BSL308PEH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS192PH6327FTSA1 dari Infineon dan BSL308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS192PH6327FTSA1 BSL308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel 2x P-Channel (Dual)
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 250 V —
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Paket PG-SOT89 (SOT-89-3, 4-pin 3+Tab) PG-TSOP6-6 (TSOT-23-6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj max / operating temp] —
Automotive Qualification AEC-Q101 (per distributor listing) AEC-Q101
Series SIPMOS Small-Signal-Transistor OptiMOS
Part Status Active —
Status RoHS [DATA_NEEDED: explicit RoHS status from datasheet] Compliant
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -2 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Configuration — Dual, common source
Suhu Kerja — -55 C to +150 C (TJ)
Jumlah Pin — 6
Channel Mode — Enhancement
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V]

Spek dan Sumber

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