BSS192PH6327FTSA1 vs BSL308PEH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS192PH6327FTSA1 disebabkan oleh Infineon dan BSL308PEH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 - 30V 2A Dual P-Ch MOSFET | Infineon

BSL308PEH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS192PH6327FTSA1 BSL308PEH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel 2x P-Channel (Dual)
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 250 V —
Continuous Drain Current (Id) @ 25C 190 mA (Ta) —
Power Dissipation (Pd) 1 W (Ta) —
Drive Voltage (Max Rds On, Min Rds On) 2.8 V, 10 V —
Rds On (Max) @ Id, Vgs [DATA_NEEDED: Rds On max @ Vgs] —
Vgs(th) (Max) [DATA_NEEDED: gate threshold voltage max] —
Vgs(th) (Typ) [DATA_NEEDED: gate threshold voltage typ] —
Kemasan PG-SOT89 (SOT-89-3, 4-pin 3+Tab) PG-TSOP6-6 (TSOT-23-6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max / operating temp] —
Automotive Qualification AEC-Q101 (per distributor listing) AEC-Q101
Series SIPMOS Small-Signal-Transistor OptiMOS
Part Status Active —
Status RoHS [DATA_NEEDED: explicit RoHS status from datasheet] Compliant
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — -30 V
Continuous Drain Current (ID) — -2 A (Ta)
Power Dissipation (PD) — 500 mW (Ta)
Configuration — Dual, common source
Suhu Operasi — -55 C to +150 C (TJ)
Bilangan Pin — 6
Channel Mode — Enhancement
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V]

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