BSS308PEH6327XTSA1 vs BSS138NH6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS308PEH6327XTSA1 dari Infineon dan BSS138NH6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS308PEH6327XTSA1 BSS138NH6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
Rentang Suhu Kerja -55 °C to +150 °C [DATA_NEEDED: Tj max and operating range]
Paket / Case PG-SOT23 (SOT-23-3) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Qualification AEC-Q101 Automotive —
Status RoHS Compliant —
Packaging Tape & Reel (T/R) Tape and Reel
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Paket — PG-SOT-23 (3-pin)
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
Bebas Halogen — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]

Spek dan Sumber

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