BSS308PEH6327XTSA1 vs BSS138NH6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS308PEH6327XTSA1 disebabkan oleh Infineon dan BSS138NH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS308PEH6327XTSA1 BSS138NH6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
Jenis Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -2 A (Ta) —
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
Gambaran Suhu Operasi -55 °C to +150 °C [DATA_NEEDED: Tj max and operating range]
Kemasan / Case PG-SOT23 (SOT-23-3) —
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 —
Qualification AEC-Q101 Automotive —
Status RoHS Compliant —
Packaging Tape & Reel (T/R) Tape and Reel
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Kemasan — PG-SOT-23 (3-pin)
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
Boson Bebas — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Lead Plating — Pb-free
Marking Code — [DATA_NEEDED: top-side marking code]

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