BSS308PEH6327XTSA1 vs BSS214NH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS308PEH6327XTSA1 dari Infineon dan BSS214NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSS214NH6327XTSA1 BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 - 20V 1.5A N-Ch MOSFET SOT-23 | Infineon

BSS214NH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSS308PEH6327XTSA1 BSS214NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
Tipe Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 20 V
Continuous Drain Current (ID) -2 A (Ta) 1.5 A (Ta)
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) 500 mW (Ta)
Rentang Suhu Kerja -55 °C to +150 °C -55C to +150C (junction)
Paket / Case PG-SOT23 (SOT-23-3) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
Qualification AEC-Q101 Automotive AEC-Q101 (Automotive)
Status RoHS Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
FET Type — N-Channel
Drain-Source On-Resistance (RDS(on) max) — 250 mOhm at VGS = 4.5 V
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
Gate-Source Voltage (VGS max) — ±12 V (recommended)
Technology — OptiMOS 2 (planar N-channel)
Paket — SOT-23 (PG-SOT23), 3 pins
Lead Finish — Pb-free lead plating (matte tin)
Level MSL — 1 (per JEDEC J-STD-020)
ESD Protection — Yes (gate ESD diode)

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