BSS314PEH6327XTSA1 vs BSS308PEH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS314PEH6327XTSA1 dari Infineon dan BSS308PEH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSS314PEH6327XTSA1 | BSS308PEH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) @ TA=25C | -1.5 A | — |
| Power Dissipation (PD) @ TA=25C | 500 mW | — |
| RDS(on) max @ VGS=-10V | 140 mOhm | — |
| RDS(on) max @ VGS=-4.5V | [DATA_NEEDED: RDS(on) at -4.5V VGS] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: gate threshold voltage] |
| Gate Drive Voltage (max Rds(on)) | -4.5 V, -10 V | — |
| Paket | PG-SOT23-3 (SOT-23-3) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (TJ) | -55 °C to +150 °C |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 Automotive |
| Pin Configuration | G-D-S (Gate, Drain, Source) | — |
| Level MSL | MSL1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS P (small signal / small power MOSFET) |
| Tipe Transistor | — | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| RDS(on) Max | — | 80 mΩ at VGS = -10 V |
| Gate-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Paket / Case | — | PG-SOT23 (SOT-23-3) |
| Jumlah Pin | — | 3 |
| Packaging | — | Tape & Reel (T/R) |
| Standard Reel Quantity | — | 3000 pcs |