BSS84PH6327XTSA2 vs BSS83PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS84PH6327XTSA2 dari Infineon dan BSS83PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS84PH6327XTSA2 | BSS83PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS84PH6327XTSA2 | — |
| FET Type | P-Channel | P-Channel |
| Drain-to-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -170 mA (Ta) | — |
| Power Dissipation (PD) | 360 mW (Ta) | — |
| On-State Resistance (RDS(on)) max | 8 ohm at VGS = -10 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-to-Source Voltage (VGS) | +/-20 V | — |
| Paket | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C | — |
| Qualification | AEC-Q101 (Automotive) | Automotive grade per Infineon |
| Technology Family | SIPMOS OptiMOS | — |
| Polarity | P-Channel Enhancement Mode | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Technology | — | MOSFET (Metal-Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TA=25C | — | 330 mA |
| Pulsed Drain Current (IDM) | — | 1.3 A |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 2.0 ohm (max) |
| Gate-Source Threshold Voltage (VGS(th)) | — | -1 V to -2.5 V (typ) |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Power Dissipation (PD) at TA=25C | — | 360 mW |
| Suhu Hubung Kerja | — | -55 C to +150 C |
| Process Technology | — | SIPMOS / OptiMOS |