BSZ065N03LSATMA1 vs BSZ130N03LSGATMA1 Perbandingan
Perbandingan bersamaan detil BSZ065N03LSATMA1 dari Infineon dan BSZ130N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSZ065N03LSATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Paket / Case | PG-TSDSON-8-FL (S308) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | — |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55 C to +150 C (junction) |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Part Family | — | OptiMOS 25V / 30V |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Ta=25 C) | — | 10 A |
| Arus Alir Berlanjut (TC=25°C) | — | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | — | 2.2 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 25 W |
| Paket | — | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |
| Qualification | — | Industrial / Commercial (non-automotive) |