BSZ065N03LSATMA1 vs BSZ130N03LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ065N03LSATMA1 sa pamamagitan ng Infineon at BSZ130N03LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ065N03LSATMA1 BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon

BSZ065N03LSATMA1 - 30V N-Channel OptiMOS MOSFET | Infineon

BSZ065N03LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ065N03LSATMA1 BSZ130N03LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 30V —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 12 A —
Continuous Drain Current (ID) at TC=25C 40 A —
Power Dissipation (PD) at TA=25C 2.1 W —
Power Dissipation (PD) at TC=25C 26 W —
Packhaging / Kaso PG-TSDSON-8-FL (S308) —
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single N-Channel —
Technology Trench MOSFET (OptiMOS) —
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55 C to +150 C (junction)
Level ng MSL 1 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Gate Drive (typical) 4.5 V —
Part Family — OptiMOS 25V / 30V
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Ta=25 C) — 10 A
Patuloy na Drain Current (TC=25°C) — 35 A
On-State Resistance Rds(on) max @ Vgs=10V — 13 mOhm
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA — 2.2 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 25 W
Packhaging — PG-TSDSON-8 (8-PowerTDFN, 5x6 mm)
Lead-Free — Yes
Wala sa Halogen — Yes
Qualification — Industrial / Commercial (non-automotive)

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