BSZ150N10LS3GATMA1 vs BSZ018NE2LSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ150N10LS3GATMA1 dari Infineon dan BSZ018NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ150N10LS3GATMA1 BSZ018NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ150N10LS3GATMA1 BSZ018NE2LSIATMA1
Technology / Family OptiMOS 3 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 25 V
Continuous Drain Current (ID, Tc=25 °C) 40 A —
On-Resistance RDS(on) max 15 mΩ —
Power Dissipation (TA=25 °C) 2.1 W —
Dissipasi Listrik (TC=25°C) 63 W —
Paket PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Operating Temperature Range (TJ) -55 °C to +150 °C —
Gate Threshold VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Lead-Free / Reflow Yes (lead-free, 260 °C peak reflow compatible) —
Level MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 22 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Pulsed Drain Current (IDM) — 160 A
Typical On-Resistance RDS(on) at VGS=10V — 1.8 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Power Dissipation at Ta=25C — 2.1 W
Power Dissipation at Tc=25C — 69 W
Rentang Suhu Kerja — -55 C to +150 C
Technology — OptiMOS (Infineon trench MOSFET)
Lead-Free — Yes

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