BSZ150N10LS3GATMA1 vs BSZ018NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ150N10LS3GATMA1 by Infineon and BSZ018NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ150N10LS3GATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.39 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | BSZ018NE2LSIATMA1 |
| Technology / Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID, Tc=25 Β°C) | 40 A | β |
| On-Resistance RDS(on) max | 15 mΞ© | β |
| Power Dissipation (TA=25 Β°C) | 2.1 W | β |
| Power Dissipation (TC=25 Β°C) | 63 W | β |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 Β°C to +150 Β°C | β |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 Β°C peak reflow compatible) | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | β |
| Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | β | 22 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | β | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 69 W |
| Operating Temperature Range | β | -55 C to +150 C |
| Technology | β | OptiMOS (Infineon trench MOSFET) |
| Lead-Free | β | Yes |