BSZ150N10LS3GATMA1 vs BSZ018NE2LSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ150N10LS3GATMA1 sa pamamagitan ng Infineon at BSZ018NE2LSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ150N10LS3GATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | BSZ018NE2LSIATMA1 |
| Technology / Family | OptiMOS 3 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A | — |
| On-Resistance RDS(on) max | 15 mΩ | — |
| Power Dissipation (TA=25 °C) | 2.1 W | — |
| Pwersang Pinahihigpit (TC=25°C) | 63 W | — |
| Packhaging | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) | — |
| Level ng MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 22 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | — | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 69 W |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C |
| Technology | — | OptiMOS (Infineon trench MOSFET) |
| Lead-Free | — | Yes |