BTS3110NHUMA1 vs BSP316PH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BTS3110NHUMA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BTS3110NHUMA1 BSP316PH6327XTSA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers MOSFETs
Status Lingkungan Hidup Aktif Aktif
Product Type Smart Low-Side Power Switch —
Family Classic HITFET —
Number of Channels 1 —
Switch Type N-Channel (1:1) —
Maximum Drain-to-Source Voltage (VDS max) 42 V —
Continuous Drain Current 1.4 A —
On-Resistance (RDS(on) typ) 200 mOhm —
Input Logic Compatibility TTL / CMOS (3.3 V and 5 V) —
On-State Input Voltage (VIH) [DATA_NEEDED: VIH value] —
Off-State Input Voltage (VIL) [DATA_NEEDED: VIL value] —
Status Flag Output Open-drain diagnostic output —
Protection Features ESD, thermal shutdown, over-load current limit —
Rentang Suhu Kerja -40 C to +150 C -55 C to +150 C (junction)
Paket PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (TO-261-4)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Automotive Qualified Yes - 12 V automotive applications —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Jumlah Pin — 3 + thermal tab
Channel Mode — Enhancement
Technology — SIPMOS (P-channel MOSFET)
Packaging — Tape & Reel (H6327 suffix)

Spek dan Sumber

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