CGD65A055S2 vs CGD65A055SH2 Perbandingan

Perbandingan bersamaan detil CGD65A055S2 dari Cambridge GaN Devices dan CGD65A055SH2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Cambridge GaN Devices
CGD65A055SH2 CGD65A055SH2 - 650V 55mΩ GaN HEMT ICeGaN® H2 | CGD

CGD65A055SH2 - 650V 55mΩ GaN HEMT ICeGaN® H2 | CGD

CGD65A055SH2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum CGD65A055S2 CGD65A055SH2
Merek Cambridge GaN Devices Cambridge GaN Devices
Kategori Transistors MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Cambridge GaN Devices —
Technology GaN-on-Si HEMT (enhancement mode) —
Drain-to-Source Voltage (VDS) 650 V —
On-Resistance (RDS(on)) 55 mΩ —
Arus Alir Berlanjut (TC=25°C) 27 A —
Gate Technology ICeGaN™ (standard-driver compatible) —
Current Sense Pin Yes (integrated CS output) —
Integrated Protection Circuit NL³ (non-linear low-loss) —
Reverse Recovery Charge (Qrr) 0 nC (zero, typical for GaN) —
Paket 16-pin DFN 8x8 mm 16-DFN (8x8 mm)
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel —
Operating Mode Enhancement-mode (normally-off) Enhancement-mode (normally-off)
Status RoHS Compliant (lead-free) —
Polarity Single FET N-Channel
Transistor Technology — Gallium Nitride (GaN-on-Si HEMT)
Drain-Source Voltage (VDS) — 650 V
Continuous Drain Current (ID, Tc=25°C) — 27 A
Static Drain-Source On-Resistance (RDS(on)) — 55 mΩ (typical, per family designation)
RDS(on) at specified ID/VGS — 77 mΩ at 2.2 A, VGS=12 V (per distributor data)
Gate Charge (Qg) — 4 nC at VGS=12 V
Gate-Source Voltage (VGS) Recommended — 12 V
Integrated Features — ICeGaN® Gate, Current Sense, NL³ Circuit
Suhu Hubung Kerja — -55 °C to +150 °C
Gaya Mounting — SMD/SMT
Application Target — AC-DC PFC, server SMPS, EV charging, motor drive
RoHS / Lead-Free — RoHS Compliant, Lead-Free (per distributor listing)

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