CGD65A055S2 vs CGD65A055SH2 比較
詳細並排比較 CGD65A055S2 由 Cambridge GaN Devices 與 CGD65A055SH2 由 Cambridge GaN Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ 啟用中規格比較
| 參數 | CGD65A055S2 | CGD65A055SH2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 類別 | Transistors | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Cambridge GaN Devices | — |
| Technology | GaN-on-Si HEMT (enhancement mode) | — |
| Drain-to-Source Voltage (VDS) | 650 V | — |
| On-Resistance (RDS(on)) | 55 mΩ | — |
| 連續汲極電流 (TC=25°C) | 27 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Current Sense Pin | Yes (integrated CS output) | — |
| Integrated Protection Circuit | NL³ (non-linear low-loss) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero, typical for GaN) | — |
| 封裝 | 16-pin DFN 8x8 mm | 16-DFN (8x8 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement-mode (normally-off) | Enhancement-mode (normally-off) |
| RoHS 狀態 | Compliant (lead-free) | — |
| Polarity | Single FET | N-Channel |
| Transistor Technology | — | Gallium Nitride (GaN-on-Si HEMT) |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 27 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 55 mΩ (typical, per family designation) |
| RDS(on) at specified ID/VGS | — | 77 mΩ at 2.2 A, VGS=12 V (per distributor data) |
| Gate Charge (Qg) | — | 4 nC at VGS=12 V |
| Gate-Source Voltage (VGS) Recommended | — | 12 V |
| Integrated Features | — | ICeGaN® Gate, Current Sense, NL³ Circuit |
| 工作接面溫度 | — | -55 °C to +150 °C |
| 安裝方式 | — | SMD/SMT |
| Application Target | — | AC-DC PFC, server SMPS, EV charging, motor drive |
| RoHS / Lead-Free | — | RoHS Compliant, Lead-Free (per distributor listing) |