CY14V104LA vs CY14V104LA-BA45XIT Perbandingan

Perbandingan bersamaan detil CY14V104LA dari Infineon dan CY14V104LA-BA45XIT dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum CY14V104LA CY14V104LA-BA45XIT
Merek Infineon Infineon
Kategori Memory ICs EEPROM
Status Lingkungan Hidup Aktif Aktif
Density 4 Mbit (512 K x 8 / 256 K x 16) 4096 kbits
Tipe Memori Non-Volatile SRAM (nvSRAM) nvSRAM (Non-Volatile SRAM)
Operating Voltage 3.3 V (3.0 V min, 3.6 V max) —
Access Time 25 ns (BA25) or 45 ns (BA45) 45 ns
Antarmuka Parallel (asynchronous SRAM-compatible) Parallel
Bus Width x8 / x16 selectable (BYTE pin) —
Paket 48-FBGA (6 x 10 x 1.20 mm) 48-FBGA (6 x 10 mm, 1.20 mm height)
Suhu Kerja -40 C to +85 C (industrial) -40C to +85C
STORE Time (typical) [DATA_NEEDED: STORE time in ms] —
RECALL Time (typical) [DATA_NEEDED: RECALL time in ms] —
Active Supply Current (Icc) [DATA_NEEDED: Icc active mA] —
Standby Current (Isb) [DATA_NEEDED: Isb uA] —
Hardware STORE Pin HSB (active low) —
Auto STORE on VCC Drop Yes (integrated VCc monitor) —
Read/Write Endurance Unlimited (SRAM side) Unlimited (SRAM mode)
Data Retention [DATA_NEEDED: retention years] —
Status RoHS Compliant RoHS Compliant
Tipe Mounting Surface Mount Surface Mount
Ukuran Memori — 4 Mbit
Organisasi — 512K x 8
Supply Voltage Range — 3 V (min VCC 2.7 V typical class, max 3.6 V)
Max Operating Voltage — 3.6 V
Automotive Qualified — No (industrial grade)
Memory Category — NVRAM, NVSRAM, SRAM Chip
Number of Words — 128 k
Bits per Word — 8 bits
Packaging — Tape & Reel (T/R)

Spek dan Sumber

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