CY14V104LA vs CY14V104LA-BA45XIT 比較

詳細並排比較 CY14V104LA 由 Infineon 與 CY14V104LA-BA45XIT 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
CY14V104LA-BA45XIT CY14V104LA-BA45XIT - 4Mb nvSRAM 45ns 3.3V | Infineon | Industrial

CY14V104LA-BA45XIT - 4Mb nvSRAM 45ns 3.3V | Infineon | Industrial

CY14V104LA-BA45XIT ✓ 啟用中

規格比較

參數 CY14V104LA CY14V104LA-BA45XIT
品牌 Infineon Infineon
類別 Memory ICs EEPROM
生命週期狀態 啟用中 啟用中
Density 4 Mbit (512 K x 8 / 256 K x 16) 4096 kbits
記憶體類型 Non-Volatile SRAM (nvSRAM) nvSRAM (Non-Volatile SRAM)
Operating Voltage 3.3 V (3.0 V min, 3.6 V max) —
Access Time 25 ns (BA25) or 45 ns (BA45) 45 ns
介面 Parallel (asynchronous SRAM-compatible) Parallel
Bus Width x8 / x16 selectable (BYTE pin) —
封裝 48-FBGA (6 x 10 x 1.20 mm) 48-FBGA (6 x 10 mm, 1.20 mm height)
工作溫度 -40 C to +85 C (industrial) -40C to +85C
STORE Time (typical) [DATA_NEEDED: STORE time in ms] —
RECALL Time (typical) [DATA_NEEDED: RECALL time in ms] —
Active Supply Current (Icc) [DATA_NEEDED: Icc active mA] —
Standby Current (Isb) [DATA_NEEDED: Isb uA] —
Hardware STORE Pin HSB (active low) —
Auto STORE on VCC Drop Yes (integrated VCc monitor) —
Read/Write Endurance Unlimited (SRAM side) Unlimited (SRAM mode)
Data Retention [DATA_NEEDED: retention years] —
RoHS 狀態 Compliant RoHS Compliant
安裝類型 Surface Mount Surface Mount
記憶體容量 — 4 Mbit
組織 — 512K x 8
Supply Voltage Range — 3 V (min VCC 2.7 V typical class, max 3.6 V)
Max Operating Voltage — 3.6 V
Automotive Qualified — No (industrial grade)
Memory Category — NVRAM, NVSRAM, SRAM Chip
Number of Words — 128 k
Bits per Word — 8 bits
Packaging — Tape & Reel (T/R)

資料表與資源

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