EP3SE260H780C3N vs EP3SE260H780C3 Perbandingan

Perbandingan bersamaan detil EP3SE260H780C3N dari Intel dan EP3SE260H780C3 dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE260H780C3N EP3SE260H780C3
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Stratix® III E EP3SE
Logic Elements (LE) 255,000 —
Embedded Memory (bits) 16,672,768 —
Number of LABs/CLBs 10,200 —
User I/Os 488 488
Number of Pins / Balls 780 —
Paket 780-BBGA, FCBGA (H780) 780-ball FCBGA (HBGA), flip-chip
Tipe Mounting Surface Mount Surface Mount (BGA)
Suhu Kerja 0 °C to +85 °C (C grade, commercial) Commercial, 0C to +85C
Process Technology 40 nm CMOS 65 nm CMOS
Maximum Core Frequency [DATA_NEEDED: maximum core frequency MHz] 500 MHz
Supply Voltage (VCCINT) [DATA_NEEDED: VCCINT nominal V] —
Transceivers [DATA_NEEDED: number of embedded transceivers and max data rate] —
DSP Blocks [DATA_NEEDED: number of DSP blocks and precision] —
Status RoHS Compliant (lead-free 'N' suffix) Compliant (per product listings)
Tingkat Sensitivitas Kekeringan (MSL) [DATA_NEEDED: MSL level per JEDEC J-STD-020] 3 (168 hours)
Configuration Method SRAM-based, configured via JTAG / passive / active serial / fast passive parallel —
Design Toolchain Altera Quartus II (legacy); Intel Quartus Prime —
Device Family — Stratix III Enhanced (Stratix III E)
Logic Elements — 255,000
Logic Array Blocks (LABs) — 10200
Embedded Memory — 16,672,768 bits (16.67 Mbit)
Operating Voltage (Core) — 0.9 V
Operating Voltage (Auxiliary) — 1.1 V
Speed Grade — C3
Packaging Type — Tray
Configuration Memory Support — Fast passive parallel, JTAG, Active Serial

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