EP3SE260H780C3N vs EP3SE260H780C3 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE260H780C3N disebabkan oleh Intel dan EP3SE260H780C3 disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP3SE260H780C3N EP3SE260H780C3
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Series Stratix® III E EP3SE
Logic Elements (LE) 255,000 —
Embedded Memory (bits) 16,672,768 —
Number of LABs/CLBs 10,200 —
User I/Os 488 488
Number of Pins / Balls 780 —
Kemasan 780-BBGA, FCBGA (H780) 780-ball FCBGA (HBGA), flip-chip
Jenis Pemasangan Surface Mount Surface Mount (BGA)
Suhu Operasi 0 °C to +85 °C (C grade, commercial) Commercial, 0C to +85C
Process Technology 40 nm CMOS 65 nm CMOS
Maximum Core Frequency [DATA_NEEDED: maximum core frequency MHz] 500 MHz
Supply Voltage (VCCINT) [DATA_NEEDED: VCCINT nominal V] —
Transceivers [DATA_NEEDED: number of embedded transceivers and max data rate] —
DSP Blocks [DATA_NEEDED: number of DSP blocks and precision] —
Status RoHS Compliant (lead-free 'N' suffix) Compliant (per product listings)
Tingkat sensitiviti Air Nama (MSL) [DATA_NEEDED: MSL level per JEDEC J-STD-020] 3 (168 hours)
Configuration Method SRAM-based, configured via JTAG / passive / active serial / fast passive parallel —
Design Toolchain Altera Quartus II (legacy); Intel Quartus Prime —
Device Family — Stratix III Enhanced (Stratix III E)
Logic Elements — 255,000
Logic Array Blocks (LABs) — 10200
Embedded Memory — 16,672,768 bits (16.67 Mbit)
Operating Voltage (Core) — 0.9 V
Operating Voltage (Auxiliary) — 1.1 V
Speed Grade — C3
Packaging Type — Tray
Configuration Memory Support — Fast passive parallel, JTAG, Active Serial

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga