EP3SE260H780C3N vs EP3SE260H780C3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780C3N sa pamamagitan ng Intel at EP3SE260H780C3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE260H780C3N EP3SE260H780C3
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Stratix® III E EP3SE
Logic Elements (LE) 255,000 —
Embedded Memory (bits) 16,672,768 —
Number of LABs/CLBs 10,200 —
User I/Os 488 488
Number of Pins / Balls 780 —
Packhaging 780-BBGA, FCBGA (H780) 780-ball FCBGA (HBGA), flip-chip
Uri ng Pagpapasok Surface Mount Surface Mount (BGA)
Temperature na Operasyon 0 °C to +85 °C (C grade, commercial) Commercial, 0C to +85C
Process Technology 40 nm CMOS 65 nm CMOS
Maximum Core Frequency [DATA_NEEDED: maximum core frequency MHz] 500 MHz
Supply Voltage (VCCINT) [DATA_NEEDED: VCCINT nominal V] —
Transceivers [DATA_NEEDED: number of embedded transceivers and max data rate] —
DSP Blocks [DATA_NEEDED: number of DSP blocks and precision] —
Tindminan RoHS Compliant (lead-free 'N' suffix) Compliant (per product listings)
Level ng Sensitivity sa Asid ng Moisture (MSL) [DATA_NEEDED: MSL level per JEDEC J-STD-020] 3 (168 hours)
Configuration Method SRAM-based, configured via JTAG / passive / active serial / fast passive parallel —
Design Toolchain Altera Quartus II (legacy); Intel Quartus Prime —
Device Family — Stratix III Enhanced (Stratix III E)
Logic Elements — 255,000
Logic Array Blocks (LABs) — 10200
Embedded Memory — 16,672,768 bits (16.67 Mbit)
Operating Voltage (Core) — 0.9 V
Operating Voltage (Auxiliary) — 1.1 V
Speed Grade — C3
Packaging Type — Tray
Configuration Memory Support — Fast passive parallel, JTAG, Active Serial

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