EP3SE260H780C3N vs EP3SE260H780C4L Perbandingan

Perbandingan bersamaan detil EP3SE260H780C3N dari Intel dan EP3SE260H780C4L dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE260H780C3N EP3SE260H780C4L
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif NRND
Series Stratix® III E —
Logic Elements (LE) 255,000 —
Embedded Memory (bits) 16,672,768 —
Number of LABs/CLBs 10,200 —
User I/Os 488 —
Number of Pins / Balls 780 —
Paket 780-BBGA, FCBGA (H780) 780-ball FCBGA (HBGA 33x33 mm)
Tipe Mounting Surface Mount Surface Mount (flip-chip BGA)
Suhu Kerja 0 °C to +85 °C (C grade, commercial) —
Process Technology 40 nm CMOS —
Maximum Core Frequency [DATA_NEEDED: maximum core frequency MHz] —
Supply Voltage (VCCINT) [DATA_NEEDED: VCCINT nominal V] —
Transceivers [DATA_NEEDED: number of embedded transceivers and max data rate] Up to 24 multi-gigabit transceivers
DSP Blocks [DATA_NEEDED: number of DSP blocks and precision] —
Status RoHS Compliant (lead-free 'N' suffix) Compliant (lead-free per datasheet)
Tingkat Sensitivitas Kekeringan (MSL) [DATA_NEEDED: MSL level per JEDEC J-STD-020] —
Configuration Method SRAM-based, configured via JTAG / passive / active serial / fast passive parallel —
Design Toolchain Altera Quartus II (legacy); Intel Quartus Prime —
Family — Stratix III E
Logic Elements — 255,000
LABs/CLBs — 10,200
Total RAM Bits — 16,672,768 (16.7 Mbit)
User I/O Count — 488
Speed Grade — C4 (middle/slow tier)
Core Voltage — 0.9 V (nominal)
Suhu Hubung Kerja — 0C to +85C (commercial)
Level MSL — [DATA_NEEDED: MSL level]
Memory Interface — DDR3, DDR2, QDRII+, RLDRAM II controllers
Configuration Mode — PS, FPP, JTAG with EPCS/EPCQ

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon