EP3SE50F484C3N vs EP3SE50F484C3G Perbandingan

Perbandingan bersamaan detil EP3SE50F484C3N dari Intel dan EP3SE50F484C3G dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE50F484C3N EP3SE50F484C3G
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Obsolete NRND
Family Stratix III E Stratix III E
Device Logic Elements 47,500 —
Logic Array Blocks (LABs) 1,900 —
Adaptive Logic Modules (ALMs) 18,750 19,000
Embedded Memory (Bits) 5,760,000 —
User I/Os 296 —
Maximum Internal Frequency 717 MHz (typical); 800 MHz per DigChip —
Process Technology TSMC 40 nm low-power CMOS —
Paket 484-ball FBGA (FCBGA), 1.0 mm pitch 484-ball FCBGA (F484), 1.0 mm pitch
Tegangan Pemuat Core and I/O voltages per Stratix III E datasheet —
Suhu Kerja 0C to +85 C (commercial, C suffix) 0C to +85C (commercial, "C")
Tipe Mounting Surface Mount (BGA) Surface Mount
Level MSL 3 (per JEDEC J-STD-020 for FCBGA packages) —
Status RoHS Lead-free (per DigiKey listing) Compliant (lead-free)
Configuration Mode Passive Serial, Fast Passive Parallel, Fast Active Serial, JTAG —
Design Software Intel Quartus II (Stratix III support) —
Status Lingkungan Hidup Obsolete (per Worldway listing 2026-04-05) —
Logic Elements — 47,500
Total Embedded Memory — 5,760,000 bits (5.76 Mbit)
M9K Memory Blocks — 320 (2,304 Kbits)
M144K Memory Blocks — 12 (1,728 Kbits)
User I/O Pins — 296
18x18 Multipliers — 384
PLLs — 4
Global Clock Networks — 16
Speed Grade — C3
Process Node — 65 nm TSMC low-power
Core Voltage — 1.1 V

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