EP3SE50F484C3N vs EP3SE50F484C3G Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE50F484C3N sa pamamagitan ng Intel at EP3SE50F484C3G sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE50F484C3N | EP3SE50F484C3G |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | NRND |
| Family | Stratix III E | Stratix III E |
| Device Logic Elements | 47,500 | — |
| Logic Array Blocks (LABs) | 1,900 | — |
| Adaptive Logic Modules (ALMs) | 18,750 | 19,000 |
| Embedded Memory (Bits) | 5,760,000 | — |
| User I/Os | 296 | — |
| Maximum Internal Frequency | 717 MHz (typical); 800 MHz per DigChip | — |
| Process Technology | TSMC 40 nm low-power CMOS | — |
| Packhaging | 484-ball FBGA (FCBGA), 1.0 mm pitch | 484-ball FCBGA (F484), 1.0 mm pitch |
| Volte ng Pagbibigay | Core and I/O voltages per Stratix III E datasheet | — |
| Temperature na Operasyon | 0C to +85 C (commercial, C suffix) | 0C to +85C (commercial, "C") |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount |
| Level ng MSL | 3 (per JEDEC J-STD-020 for FCBGA packages) | — |
| Tindminan RoHS | Lead-free (per DigiKey listing) | Compliant (lead-free) |
| Configuration Mode | Passive Serial, Fast Passive Parallel, Fast Active Serial, JTAG | — |
| Design Software | Intel Quartus II (Stratix III support) | — |
| Katayuan ng Lifecycle | Obsolete (per Worldway listing 2026-04-05) | — |
| Logic Elements | — | 47,500 |
| Total Embedded Memory | — | 5,760,000 bits (5.76 Mbit) |
| M9K Memory Blocks | — | 320 (2,304 Kbits) |
| M144K Memory Blocks | — | 12 (1,728 Kbits) |
| User I/O Pins | — | 296 |
| 18x18 Multipliers | — | 384 |
| PLLs | — | 4 |
| Global Clock Networks | — | 16 |
| Speed Grade | — | C3 |
| Process Node | — | 65 nm TSMC low-power |
| Core Voltage | — | 1.1 V |