EP3SE50F484C3N vs EP3SE50F484C3G 比較

詳細並排比較 EP3SE50F484C3N 由 Intel 與 EP3SE50F484C3G 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP3SE50F484C3N EP3SE50F484C3G
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 Obsolete NRND
Family Stratix III E Stratix III E
Device Logic Elements 47,500 —
Logic Array Blocks (LABs) 1,900 —
Adaptive Logic Modules (ALMs) 18,750 19,000
Embedded Memory (Bits) 5,760,000 —
User I/Os 296 —
Maximum Internal Frequency 717 MHz (typical); 800 MHz per DigChip —
Process Technology TSMC 40 nm low-power CMOS —
封裝 484-ball FBGA (FCBGA), 1.0 mm pitch 484-ball FCBGA (F484), 1.0 mm pitch
供應電壓 Core and I/O voltages per Stratix III E datasheet —
工作溫度 0C to +85 C (commercial, C suffix) 0C to +85C (commercial, "C")
安裝類型 Surface Mount (BGA) Surface Mount
MSL 等級 3 (per JEDEC J-STD-020 for FCBGA packages) —
RoHS 狀態 Lead-free (per DigiKey listing) Compliant (lead-free)
Configuration Mode Passive Serial, Fast Passive Parallel, Fast Active Serial, JTAG —
Design Software Intel Quartus II (Stratix III support) —
生命週期狀態 Obsolete (per Worldway listing 2026-04-05) —
Logic Elements — 47,500
Total Embedded Memory — 5,760,000 bits (5.76 Mbit)
M9K Memory Blocks — 320 (2,304 Kbits)
M144K Memory Blocks — 12 (1,728 Kbits)
User I/O Pins — 296
18x18 Multipliers — 384
PLLs — 4
Global Clock Networks — 16
Speed Grade — C3
Process Node — 65 nm TSMC low-power
Core Voltage — 1.1 V

資料表與資源

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