EP3SE50F780C4L vs EP3SE50F780C4G Perbandingan

Perbandingan bersamaan detil EP3SE50F780C4L dari Intel dan EP3SE50F780C4G dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE50F780C4L EP3SE50F780C4G
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Aktif
Series Stratix III E Stratix III
Family Stratix III Stratix III E
Logic Elements (LE) 47,500 —
Embedded Memory 5,760,000 bits 5.76 Mbit (5760000 bit)
User I/Os 488 —
DSP Blocks (18x18 multipliers) 304 (19x16) —
Paket 780-ball FCBGA (Flip-Chip BGA) 780-ball FBGA (FCBGA)
Process Node 40 nm —
Core Voltage 1.1 V —
Speed Grade C4 (commercial, speed 4) —
Lead-Free (L suffix) Yes —
Configuration Method Passive Serial / Fast Passive Parallel / JTAG / Enhanced —
Suhu Kerja [DATA_NEEDED: full industrial/commercial grade] —
Status RoHS Compliant (lead-free) Compliant
Transceivers [DATA_NEEDED: per Stratix III E variant] —
PLLs [DATA_NEEDED: PLL count] —
Logic Elements — 47,500 LE
Adaptive Logic Modules (ALMs) — 19,000 ALM
Number of I/Os — 488
Number of Logic Array Blocks (LABs) — [DATA_NEEDED: LAB count from datasheet]
Number of Multipliers (18x18) — [DATA_NEEDED: 18x18 multiplier count]
Process Technology — 40 nm TSMC
Core Supply Voltage — 1.1 V
Rentang Suhu Kerja — 0 C to +85 C (commercial)
Tipe Mounting — Surface Mount (SMD/SMT)
Lead-Free — Yes
Level MSL — MSL3 (per JEDEC J-STD-020)
Configuration Memory — SRAM-based (volatile, requires configuration device)
Design Software — Quartus II

Spek dan Sumber

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