EP3SE50F780C4L vs EP3SE50F780C4G Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci EP3SE50F780C4L disebabkan oleh Intel dan EP3SE50F780C4G disebabkan oleh Intel. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr EP3SE50F780C4L EP3SE50F780C4G
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup NRND Aktif
Series Stratix III E Stratix III
Family Stratix III Stratix III E
Logic Elements (LE) 47,500 —
Embedded Memory 5,760,000 bits 5.76 Mbit (5760000 bit)
User I/Os 488 —
DSP Blocks (18x18 multipliers) 304 (19x16) —
Kemasan 780-ball FCBGA (Flip-Chip BGA) 780-ball FBGA (FCBGA)
Process Node 40 nm —
Core Voltage 1.1 V —
Speed Grade C4 (commercial, speed 4) —
Lead-Free (L suffix) Yes —
Configuration Method Passive Serial / Fast Passive Parallel / JTAG / Enhanced —
Suhu Operasi [DATA_NEEDED: full industrial/commercial grade] —
Status RoHS Compliant (lead-free) Compliant
Transceivers [DATA_NEEDED: per Stratix III E variant] —
PLLs [DATA_NEEDED: PLL count] —
Logic Elements — 47,500 LE
Adaptive Logic Modules (ALMs) — 19,000 ALM
Number of I/Os — 488
Number of Logic Array Blocks (LABs) — [DATA_NEEDED: LAB count from datasheet]
Number of Multipliers (18x18) — [DATA_NEEDED: 18x18 multiplier count]
Process Technology — 40 nm TSMC
Core Supply Voltage — 1.1 V
Gambaran Suhu Operasi — 0 C to +85 C (commercial)
Jenis Pemasangan — Surface Mount (SMD/SMT)
Lead-Free — Yes
Aras MSL — MSL3 (per JEDEC J-STD-020)
Configuration Memory — SRAM-based (volatile, requires configuration device)
Design Software — Quartus II

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