H5AN4G8NBJR-UHC vs H5AN4G6NBJR-UHC Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-UHC dari SK hynix dan H5AN4G6NBJR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-UHC | H5AN4G6NBJR-UHC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 256M x 16 |
| Laju Data | 2400 Mbps (PC2400) | — |
| Tegangan Pemuat | 1.2 V | — |
| Antarmuka | DDR4 (JEDEC) | — |
| Paket | TFBGA-78 (11 x 7.5 mm) | FBGA-96 (PBGA-96) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | CMOS |
| Lifecycle Code | Active | — |
| Status RoHS | Compliant (Rohs Code: Yes) | Compliant |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| Latensi CAS | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | — |
| Ukuran Memori | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |