H5AN4G8NBJR-UHC vs H5AN4G6NBJR-UHC 比較
詳細並排比較 H5AN4G8NBJR-UHC 由 SK hynix 與 H5AN4G6NBJR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN4G8NBJR-UHC | H5AN4G6NBJR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| 組織 | 512M x 8 | 256M x 16 |
| 資料速率 | 2400 Mbps (PC2400) | — |
| 供應電壓 | 1.2 V | — |
| 介面 | DDR4 (JEDEC) | — |
| 封裝 | TFBGA-78 (11 x 7.5 mm) | FBGA-96 (PBGA-96) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | CMOS |
| Lifecycle Code | Active | — |
| RoHS 狀態 | Compliant (Rohs Code: Yes) | Compliant |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | -40C to +95C |
| CAS 延遲 | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | — |
| 記憶體容量 | — | 4 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes (DM) |
| Asynchronous Reset | — | Yes (RESET_n) |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes (command/address CRC) |