H5AN8G6NCJR-UHC vs H5AN8G6NDJR-UHC Perbandingan

Perbandingan bersamaan detil H5AN8G6NCJR-UHC dari SK hynix dan H5AN8G6NDJR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN8G6NDJR-UHC H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN8G6NCJR-UHC H5AN8G6NDJR-UHC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasi 512M x 16 512M x 16
Speed Grade DDR4-2400 (2400 Mbps/pin) 3200 Mbps (PC4-25600)
Tegangan Pemuat 1.2 V —
Paket FBGA-96 (96-ball) FBGA-96 (13x7.5 mm)
Tipe Mounting Surface Mount (BGA) —
Suhu Kerja 0C to +95C —
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask (DM) Yes —
Write Leveling Yes —
CRC Function Yes —
Dynamic On-Die Termination Yes —
ZQ Calibration Yes —
Lead-Free / Halogen-Free Yes (per family datasheet) —
Status RoHS [DATA_NEEDED: RoHS certification statement] —
Supply Voltage (VDD) — 1.2 V
Supply Voltage (VDDQ) — 1.2 V
Number of Terminals — 96
Package Shape — RECTANGULAR
JESD-30 Code — R-PBGA-B96
Maximum Operating Temperature — 85 °C
Minimum Operating Temperature — 0 °C
RoHS — Compliant
Lead-Free — Yes
Bebas Halogen — Yes
Additional Features — Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling

Spek dan Sumber

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