H5AN8G8NAFR-UHCR vs H5AN8G8NAFR-VKC Perbandingan
Perbandingan bersamaan detil H5AN8G8NAFR-UHCR dari SK hynix dan H5AN8G8NAFR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G8NAFR-UHCR | H5AN8G8NAFR-VKC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 2400 Mbps/pin (PC2400) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Antarmuka | CMOS, synchronous DDR4 | SSTL12 |
| Paket | FBGA-78 (PBGA78) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packing Suffix | R = Tape & Reel | — |
| Speed Grade Code | -UH | — |
| Generation Family | H5AN8GxNAFR-xxC (DDR4) | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Application Class | Main memory / high bandwidth | — |
| Latensi CAS | [DATA_NEEDED: CAS latency (CL)] | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Speed Grade | — | DDR4-2666 (VKC bin) |
| Burst Length | — | 8 (BL8) |
| Bank Group Architecture | — | Supported (per DDR4 JEDEC architecture) |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes (DLL for output skew control) |
| Process Technology | — | CMOS |
| Recommended Application | — | Main memory requiring large density and high bandwidth |