H5AN8G8NCJR-RDC vs H5ANAG8NBJR-RDC Perbandingan
Perbandingan bersamaan detil H5AN8G8NCJR-RDC dari SK hynix dan H5ANAG8NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G8NCJR-RDC | H5ANAG8NBJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | 16 Gbit |
| Organisasi | x8 | 2G x 8 |
| Laju Data | up to 2666 Mbps | — |
| Tegangan Pemuat | 1.2 V (VDD) | — |
| Antarmuka | DDR4 (JEDEC standard) | SSTL12 |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| Paket | 78-ball FBGA | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range for -RDC suffix] | [DATA_NEEDED: Operating Temperature Range] |
| Latensi CAS | [DATA_NEEDED: CAS latency for -RDC speed grade] | [DATA_NEEDED: CAS Latency] |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Bebas Halogen | Yes | — |
| Status RoHS | Compliant | Compliant (lead-free PBGA per family product data) |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade (suffix R) | — | DDR4-2666 class |
| Refresh | — | Self-refresh and auto-refresh (8K/64ms class per family datasheet) |
| Bank Groups | — | 4 (per 16Gb DDR4 family datasheet) |
| Data Strobe | — | DQS with read/write training |
| Data Bus Inversion | — | Supported (DBI) |
| Status Lingkungan Hidup | — | Active |