H5AN8G8NCJR-RDC vs H5ANAG8NBJR-RDC 比較
詳細並排比較 H5AN8G8NCJR-RDC 由 SK hynix 與 H5ANAG8NBJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NCJR-RDC | H5ANAG8NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | 16 Gbit |
| 組織 | x8 | 2G x 8 |
| 資料速率 | up to 2666 Mbps | — |
| 供應電壓 | 1.2 V (VDD) | — |
| 介面 | DDR4 (JEDEC standard) | SSTL12 |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range for -RDC suffix] | [DATA_NEEDED: Operating Temperature Range] |
| CAS 延遲 | [DATA_NEEDED: CAS latency for -RDC speed grade] | [DATA_NEEDED: CAS Latency] |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| 無鹵素 | Yes | — |
| RoHS 狀態 | Compliant | Compliant (lead-free PBGA per family product data) |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade (suffix R) | — | DDR4-2666 class |
| Refresh | — | Self-refresh and auto-refresh (8K/64ms class per family datasheet) |
| Bank Groups | — | 4 (per 16Gb DDR4 family datasheet) |
| Data Strobe | — | DQS with read/write training |
| Data Bus Inversion | — | Supported (DBI) |
| 生命週期狀態 | — | Active |