H5ANAG8NBJR-RDC vs H5AN8G8NCJR-RDC Perbandingan
Perbandingan bersamaan detil H5ANAG8NBJR-RDC dari SK hynix dan H5AN8G8NCJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG8NBJR-RDC | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 8 Gb (1 GB) |
| Organisasi | 2G x 8 | x8 |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Antarmuka | SSTL12 | DDR4 (JEDEC standard) |
| Speed Grade (suffix R) | DDR4-2666 class | — |
| Paket | 78-ball FBGA | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Refresh | Self-refresh and auto-refresh (8K/64ms class per family datasheet) | — |
| Bank Groups | 4 (per 16Gb DDR4 family datasheet) | — |
| Data Strobe | DQS with read/write training | — |
| Data Bus Inversion | Supported (DBI) | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Status RoHS | Compliant (lead-free PBGA per family product data) | Compliant |
| Status Lingkungan Hidup | Active | — |
| Laju Data | — | up to 2666 Mbps |
| Tegangan Pemuat | — | 1.2 V (VDD) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Bebas Halogen | — | Yes |